Valley engineering by strain in Kekulé-distorted graphene
نویسندگان
چکیده
منابع مشابه
Strain engineering water transport in graphene nanochannels.
Using equilibrium and nonequilibrium molecular dynamic simulations, we found that engineering the strain on the graphene planes forming a channel can drastically change the interfacial friction of water transport through it. There is a sixfold change of interfacial friction stress when the strain changes from -10% to 10%. Stretching the graphene walls increases the interfacial shear stress, whi...
متن کاملStrain engineering of graphene: a review.
Graphene has intrigued the science community by many unique properties not found in conventional materials. In particular, it is the strongest two-dimensional material ever measured, being able to sustain reversible tensile elastic strain larger than 20%, which yields an interesting possibility to tune the properties of graphene by strain and thus opens a new field called "straintronics". In th...
متن کاملNano-scale strain engineering of graphene and graphene-based devices
Structural distortions in nano-materials can induce dramatic changes in their electronic properties. This situation is well manifested in graphene, a two-dimensional honeycomb structure of carbon atoms with only one atomic layer thickness. In particular, strained graphene can result in both charging effects and pseudo-magnetic fields, so that controlled strain on a perfect graphene lattice can ...
متن کاملBiaxial Compressive Strain Engineering in Graphene/Boron Nitride Heterostructures
Strain engineered graphene has been predicted to show many interesting physics and device applications. Here we study biaxial compressive strain in graphene/hexagonal boron nitride heterostructures after thermal cycling to high temperatures likely due to their thermal expansion coefficient mismatch. The appearance of sub-micron self-supporting bubbles indicates that the strain is spatially inho...
متن کاملDetection of valley polarization in graphene by a superconducting contact.
Because the valleys in the band structure of graphene are related by time-reversal symmetry, electrons from one valley are reflected as holes from the other valley at the junction with a superconductor. We show how this Andreev reflection can be used to detect the valley polarization of edge states produced by a magnetic field. In the absence of intervalley relaxation, the conductance GNS=(2e2/...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2019
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.99.035411